Intel and Micron Technology have released a three-bit per cell (3bpc) NAND flash memory device, on 25-nanometre (nm) silicon process technology.
This production is the industry's highest capacity, smallest NAND device, according to Intel.
It comes after the company's introduction of industry's smallest die size, at 25nm, in January. The companies expect the new release to be in full production by the end of the year.
“Designed by the IM Flash Technologies (IMFT) NAND flash joint venture, the 64-gigabit (Gb), 25nm lithography stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell). The industry also refers to 3bpc as triple-level cell,” says Intel.
“Small form-factor flash memory is especially important for consumer end-product flash cards, given their intrinsic compact design.“
Cost advantage
Intel says this achievement provides cost advantages for a wide range of consumer storage applications.
“The new 64Gb 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets.”
It explains that flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices, such as digital cameras, portable media players, digital camcorders and all types of personal computers.
“These markets are under constant pressure to provide higher capacities at low prices,” says Intel.
Intel VP and GM of Intel NAND Solutions Tom Rampone says: “Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB [64Gb] TLC 25nm NAND device.”
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