New memory technology, Magnetic Random Access Memory (MRAM), could deliver a significant increase for portables` battery life, and lead to "instant-on" computers.
Under development by IBM Research and German semiconductor vendor Infineon, MRAM will store more information, access it faster and use less battery power than the electronic memory used today. It also retains information when power is turned off, meaning products like PCs could start up instantly, without waiting for software to boot up.
Instead of electronic charges to store bits of data, MRAM uses magnetic charges. IBM Research pioneered the development of a miniature component called the "magnetic tunnel junction" in 1974, eventually adapting it as a means to store information and to build an actual working MRAM chip in 1998. Using this IBM technology, with Infineon creating very high-density semiconductor memory, the companies believe MRAM products could be commercially available in 2004.
"MRAM has the potential to replace today`s memory technologies in electronic products of the future," says Bijan Davari, IBM Fellow and VP of technology and emerging products, IBM Microelectronics. "Today`s announcement represents a major step forward for MRAM, quickly moving the technology out of the pure research stage into product development."
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